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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistors 2N6674/6675 description high power dissipation high switching speed collector-emitter breakdown voltage- : v (br)ceo = 300v(min)- 2N6674 = 400v(min)- 2n6675 applications designed for high voltage switching applications such as: switching regulators inverters solenoid and relay drivers deflection circuits absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w symbol parameter value unit 2n 6674 450 v cbo collector-base voltage 2n 6675 650 v 2n 6674 300 v ceo collector-emitter voltage 2n 6675 400 2n 6674 450 v cex collector-emitter voltage 2n 6675 650 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i b b ase current-continuous 5.0 a collector power dissipation@t a =25 6 p c collector power dissipation@t c =25 175 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistors 2N6674/6675 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit 2N6674 300 v (br)ceo collector-emitter breakdown voltage 2n6675 i c = 200ma ; i b = 0 400 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 2a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 15a; i b = 5a 5.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a 1.5 v 2N6674 v ce = 450v; v be = -1.5v 0.1 i cex collector cutoff current 2n6675 v ce = 650v; v be = -1.5v 0.1 ma 2N6674 v cb = 450v; i e = 0 1.0 i cbo collector cutoff current 2n6675 v cb = 650v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 2.0 ma h fe-1 dc current gain i c = 1a ; v ce = 3v 15 40 h fe-2 dc current gain i c = 10a ; v ce = 2v 8 20 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 500 pf |
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